? 2008 ixys corporation, all rights reserved genx3 tm 600v igbt symbol test conditions maximum ratings v ces t c = 25c to 150c 600 v v cgr t j = 25c to 150c, r ge = 1m 600 v v ges continuous 20 v v gem transient 30 v i c110 t c = 110c 56 a i cm t c = 25c, 1ms 350 a ssoa v ge = 15v, t vj = 125c, r g = 5 i cm = 150 a (rbsoa) clamped inductive load @ 600v p d t c = 25c 330 w t j - 55 ... +150 c t jm 150 c t stg - 40 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10 seconds 260 c m d mounting torque 1.13/10 nm/lb.in. weight 6 g ds99940a(05/08) IXGH56N60B3D1 g = gate c = collector e = emitter tab = collector symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. v ge(th) i c = 250 a, v ce = v ge 3.0 5.0 v i ces v ce = v ces 300 a v ge = 0v t j = 125c 2 ma i ges v ce = 0v, v ge = 20v 100 na v ce(sat) i c = 44a, v ge = 15v, note 1 1.49 1.80 v t j = 125c 1.47 v ces = 600v i c110 = 56a v ce(sat) 1.8v medium speed low vsat pt igbts 5-40 khz switching to-247 (ixgh) g c e (tab) features z optimized for low conduction and switching losses z square rbsoa z anti-parallel ultra fast diode z international standard package advantages z high power density z low gate drive requirement applications z power inverters z ups z motor drives z smps z pfc circuits z battery chargers z welding machines z lamp ballasts
ixys reserves the right to change limits, test conditions and dimensions. IXGH56N60B3D1 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs i c = 44a, v ce = 10v, note 1 36 60 s c ie s 3950 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 220 pf c res 56 pf q g 138 nc q ge i c = 40a, v ge = 15v, v ce = 0.5 ? v ces 25 nc q gc 47 nc t d(on) 26 ns t ri 41 ns e on 1.30 mj t d(off) 155 335 ns t fi 95 165 ns e of f 1.05 2.0 mj t d(on) 26 ns t ri 37 ns e on 2.34 mj t d(off) 220 ns t fi 165 ns e off 2.20 mj r thjc 0.375 c/w r thcs 0.21 c/w notes 1: pulse test, t 300 s; duty cycle, d 2%. dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc e ? p to-247 (ixgh) outline 1 2 3 terminals: 1 - gate 2 - drain 3 - source tab - drain reverse diode (fred) characteristic values (t j = 25c, unless otherwise specified) symbol test conditions min. typ. max. v f i f = 30a, v ge = 0v, note 1 2.8 v t j = 150c 1.6 v i rm 4 a t rr t j = 100c 100 ns r thjc 1.5 c/w r thcs 1.5 c/w i f = 30a, v ge = 0v, v r = 100v -di f /dt =100a/ s i f = 1a; -di/dt = 100a/ s, v r = 30v inductive load, t j = 25c i c = 44a, v ge = 15v v ce = 480v, r g = 5 inductive load, t j = 125c i c = 44a, v ge = 15v v ce = 480v, r g = 5
? 2008 ixys corporation, all rights reserved IXGH56N60B3D1 fig. 1. output characteristics @ 25oc 0 10 20 30 40 50 60 70 80 90 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 5v 9v fig. 2. extended output characteristics @ 25oc 0 50 100 150 200 250 300 012345678910 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 9v fig. 3. output characteristics @ 125oc 0 10 20 30 40 50 60 70 80 90 0.00.20.40.60.81.01.21.41.61.82.02.2 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 9v 5v fig. 4. dependence of v ce(sat) on junction temperature 0.7 0.8 0.9 1.0 1.1 1.2 1.3 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 88a i c = 44a i c = 22a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 1.0 1.5 2.0 2.5 3.0 3.5 4.0 56789101112131415 v ge - volts v ce - volts i c = 88a 44a 22a t j = 25oc fig. 6. input admittance 0 20 40 60 80 100 120 140 160 180 200 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 v ge - volts i c - amperes t j = 125oc 25oc - 40oc
ixys reserves the right to change limits, test conditions and dimensions. IXGH56N60B3D1 fig. 11. maximum transient thermal impedance 0.01 0.10 1.00 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 7. transconductance 0 10 20 30 40 50 60 70 80 90 100 0 20 40 60 80 100 120 140 i c - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 10. reverse-bias safe operating area 0 20 40 60 80 100 120 140 160 100 200 300 400 500 600 v ce - volts i c - amperes t j = 125oc r g = 5 ? dv / dt < 10v / ns fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 20406080100120140 q g - nanocoulombs v ge - volts v ce = 300v i c = 40a i g = 10ma fig. 9. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarads f = 1 mhz c ies c oes c res ixys ref: g_56n60b3(65) 05-05-08-b
? 2008 ixys corporation, all rights reserved IXGH56N60B3D1 fig. 12. inductive switching energy loss vs. gate resistance 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 5 101520253035404550 r g - ohms e off - millijoules 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 e on - millijoules e off e on - - - - t j = 125oc , v ge = 15v v ce = 480v i c = 72a i c = 36a i c = 18a fig. 15. inductive turn-off switching times vs. gate resistance 100 120 140 160 180 200 220 240 5 101520253035404550 r g - ohms t f - nanoseconds 200 300 400 500 600 700 800 900 t d(off) - nanoseconds t f t d(off) - - - - t j = 125oc, v ge = 15v v ce = 480v i c = 36a i c = 18a i c = 72a fig. 13. inductive swiching energy loss vs. collector current 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 15 20 25 30 35 40 45 50 55 60 65 70 75 i c - amperes e off - millijoules 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 e on - millijoules e off e on - - - - r g = 5 ? , v ge = 15v v ce = 480v t j = 125oc t j = 25oc fig. 14. inductive swiching energy loss vs. junction temperature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade e off - millijoules 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 e on - millijoules e off e on - - - - r g = 5 ? , v ge = 15v v ce = 480v i c = 18a i c = 72a i c = 36a fig. 16. inductive turn-off switching times vs. collector current 70 90 110 130 150 170 190 210 15 20 25 30 35 40 45 50 55 60 65 70 75 i c - amperes t f - nanoseconds 120 140 160 180 200 220 240 260 t d(off) - nanoseconds t f t d(off) - - - - r g = 5 ? , v ge = 15v v ce = 480v t j = 125oc t j = 25oc fig. 17. inductive turn-off switching times vs. junction temperature 70 90 110 130 150 170 190 210 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 150 165 180 195 210 225 240 255 t d(off) - nanoseconds t f t d(off) - - - - r g = 5 ? , v ge = 15v v ce = 480v i c = 18a, 36a, 72a i c = 36a, 18a
ixys reserves the right to change limits, test conditions and dimensions. IXGH56N60B3D1 ixys ref: g_56n60b3(65) 05-05-08-b fig. 18. inductive turn-on switching times vs. gate resistance 10 30 50 70 90 110 130 150 5 101520253035404550 r g - ohms t r - nanoseconds 20 30 40 50 60 70 80 90 t d(on) - nanoseconds t r t d(on ) - - - - t j = 125oc, v ge = 15v v ce = 480v i c = 72a, 36a, 18a i c = 36a, 18a fig. 19. inductive turn-on switching times vs. collector current 15 25 35 45 55 65 75 15 20 25 30 35 40 45 50 55 60 65 70 75 i c - amperes t r - nanoseconds 20 22 24 26 28 30 32 t d(on) - nanoseconds t r t d(on) - - - - r g = 5 ? , v ge = 15v v ce = 480v t j = 25oc, 125oc fig. 20. inductive turn-on switching times vs. junction temperature 10 20 30 40 50 60 70 80 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds 20 22 24 26 28 30 32 34 t d(on) - nanoseconds t r t d(on) - - - - r g = 5 ? , v ge = 15v v ce = 480v i c = 18a i c = 36a i c = 72a
? 2008 ixys corporation, all rights reserved 200 600 1000 0 400 800 60 70 80 90 0.00001 0.0001 0.001 0.01 0.1 1 0.001 0.01 0.1 1 0 40 80 120 160 0.0 0.5 1.0 1.5 2.0 k f t vj c -di f /dt t s k/w 0 200 400 600 800 1000 0 5 10 15 20 0.00 0.25 0.50 0.75 1.00 v fr di f /dt v 200 600 1000 0 400 800 0 5 10 15 20 25 30 100 1000 0 200 400 600 800 1000 0123 0 10 20 30 40 50 60 i rm q r i f a v f -di f /dt -di f /dt a/ s a v nc a/ s a/ s t rr ns t fr z thjc a/ s s dsep 29-06 i f = 60a i f = 30a i f = 15a t vj = 100c v r = 300v t vj = 100c i f = 30a fig. 23. peak reverse current i rm versus -di f /dt fig. 22. reverse recovery charge q r versus -di f /dt fig. 21. forward current i f versus v f t vj = 100c v r = 300v t vj = 100c v r = 300v i f = 60a i f = 30a i f = 15a q r i rm fig. 24. dynamic parameters q r , i rm versus t vj fig. 25. recovery time t rr versus -di f /dt fig. 26. peak forward voltage v fr and t fr versus di f /dt i f = 60a i f = 30a i f = 15a t fr v fr fig. 27. transient thermal resistance junction to case t vj =25c t vj =100c t vj =150c time - seconds 0.0001 0.001 0.01 0.1 1 z thjc - k/w 0.001 0.01 0.1 1 IXGH56N60B3D1
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